|Dr. Sanatan Chattopadhyay, Nano Centre, Calcutta University, Kolkata|
Utilization of process induced strain for developing high pressure TiO2-II phaseAbstract:
Titanium dioxide (TiO2) is being extensively studied in the advance CMOS high dielectric constant gate technology, effective photo-catalytic applications to tackle environmental issues, renewal energy harvesting as well as for typical gas sensing applications. TiO2 are generally used in either anatase and rutile phases for such applications, where the anatase phase naturally converted to rutile at high temperature. However, recent studies suggest that by applying relatively high mechanical pressure, both of these phases can be converted to several other phases of TiO2. Out of these phases, TiO2-II phase has been observed to be more stable and durable.
In the current lecture, the utilization of process induced stress as the source of high pressure to grow TiO2-II phase will be discussed.
Dr. Sanatan Chattopadhyay began his research career in the field of strained-Si/SiGe devices in 1996 at IIT Kharagpur. In 1999, he joined as a Post Doctoral Fellow under Singapore-MIT Alliance. In 2001, he joined as a Research Associate in the School of Electrical, Electronics and Computer Engineering at the University of Newcastle Upon Tyne, UK, and subsequently appointed as a faculty member in 2003. In 2007, Dr. Chattopadhyay joined the Department of Electronic Science, University of Calcutta. He is one of the founder members of the “Center for Research in Nanoscience and Nanotechnology” and the “Center of Excellence: Systems Biology and Bio-medical Engineering” of the University of Calcutta. He has supervised 13 Ph.D students so far and published more than 300 international Journal and Conference papers. His current research interests include: the advance nano-scale and quantum device modeling and fabrication, design and fabrication of biosensors, digital microfluidics, and energy harvesting devices.